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IPW65R150CFDFKSA1 Технические параметры

Infineon Technologies  IPW65R150CFDFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 195.3W Tc
Turn Off Delay Time 52.8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 195.3W
Turn On Delay Time 12.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 7.6ns
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Continuous Drain Current (ID) 22.4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 72A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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