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IRF100B201 Технические параметры

Infineon Technologies  IRF100B201 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25℃ 192A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 441W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®, StrongIRFET™
Published 2013
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Continuous Drain Current (ID) 192A
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF100B201 Документы

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