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IRF100P219XKMA1 Технические параметры

Infineon Technologies  IRF100P219XKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 341W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 278μA
Input Capacitance (Ciss) (Max) @ Vds 12020pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 195A
Drain-source On Resistance-Max 0.0017Ohm
Pulsed Drain Current-Max (IDM) 780A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 464 mJ
RoHS Status ROHS3 Compliant
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IRF100P219XKMA1 Документы

IRF100P219XKMA1 brand manufacturers: Infineon Technologies, Anli stock, IRF100P219XKMA1 reference price.Infineon Technologies. IRF100P219XKMA1 parameters, IRF100P219XKMA1 Datasheet PDF and pin diagram description download.You can use the IRF100P219XKMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF100P219XKMA1 pin diagram and circuit diagram and usage method of function,IRF100P219XKMA1 electronics tutorials.You can download from the Anli.