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IRF1010EZSPBF Технические параметры

Infineon Technologies  IRF1010EZSPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package D2PAK
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 38 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Current Rating 75A
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 19 ns
Свойство продукта Значение свойства
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 90ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 54 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Input Capacitance 2.81nF
Drain to Source Resistance 8.5mOhm
Rds On Max 8.5 mΩ
Nominal Vgs 4 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF1010EZSPBF Документы

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