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IRF1010ZPBF Технические параметры

Infineon Technologies  IRF1010ZPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 36 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2003
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 7.5MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Current Rating 75A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 150ns
Vgs (Max) ±20V
Fall Time (Typ) 92 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 33 ns
Nominal Vgs 4 V
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF1010ZPBF Документы

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