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IRF1010ZSTRLPBF Технические параметры

Infineon Technologies  IRF1010ZSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 36 ns
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2001
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 150ns
Vgs (Max) ±20V
Fall Time (Typ) 92 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 55V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF1010ZSTRLPBF Документы

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