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IRF1312PBF Технические параметры

Infineon Technologies  IRF1312PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25℃ 95A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 210W Tc
Turn Off Delay Time 47 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 10Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 80V
Current Rating 95A
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 210W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 57A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Continuous Drain Current (ID) 95A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Dual Supply Voltage 80V
Input Capacitance 5.45nF
Rds On Max 10 mΩ
Nominal Vgs 5.5 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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IRF1312PBF Документы

IRF1312PBF brand manufacturers: Infineon Technologies, Anli stock, IRF1312PBF reference price.Infineon Technologies. IRF1312PBF parameters, IRF1312PBF Datasheet PDF and pin diagram description download.You can use the IRF1312PBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF1312PBF pin diagram and circuit diagram and usage method of function,IRF1312PBF electronics tutorials.You can download from the Anli.