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IRF135S203 Технические параметры

Infineon Technologies  IRF135S203 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25℃ 129A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 441W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®, StrongIRFET™
Published 2002
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 77A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 135V
Vgs (Max) ±20V
Continuous Drain Current (ID) 129A
RoHS Status ROHS3 Compliant

IRF135S203 Документы

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