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IRF1405PBF Технические параметры
Infineon Technologies IRF1405PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 330W Tc | |
| Turn Off Delay Time | 130 ns | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 169A Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Resistance | 5.3mOhm | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Voltage - Rated DC | 55V | |
| Current Rating | 169A | |
| Lead Pitch | 2.54mm | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 330W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Case Connection | DRAIN | |
| Turn On Delay Time | 13 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5.3m Ω @ 101A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5480pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
| Rise Time | 190ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 110 ns | |
| Continuous Drain Current (ID) | 169A | |
| Threshold Voltage | 4V | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 75A | |
| Drain to Source Breakdown Voltage | 55V | |
| Pulsed Drain Current-Max (IDM) | 680A | |
| Dual Supply Voltage | 55V | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Recovery Time | 130 ns | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 4 V | |
| Length | 10.668mm | |
| Height | 19.8mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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