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IRF1407PBF Технические параметры

Infineon Technologies  IRF1407PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 330W Tc
Current - Continuous Drain (Id) @ 25℃ 130A Tc
Turn Off Delay Time 150 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7.8Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 75V
Current Rating 130A
Element Configuration Single
Power Dissipation 330W
Свойство продукта Значение свойства
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.8mOhm @ 78A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Drain to Source Voltage (Vdss) 75V
Vgs (Max) ±20V
Fall Time (Typ) 140 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Input Capacitance 5.6nF
Drain to Source Resistance 7.8mOhm
Rds On Max 7.8 mΩ
Nominal Vgs 4 V
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF1407PBF Документы

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