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IRF1607PBF Технические параметры

Infineon Technologies  IRF1607PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 142A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 380W Tc
Turn Off Delay Time 84 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 7.5Ohm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 75V
Current Rating 142A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V
Rise Time 130ns
Vgs (Max) ±20V
Fall Time (Typ) 86 ns
Continuous Drain Current (ID) 142A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 570A
Dual Supply Voltage 75V
Nominal Vgs 4 V
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF1607PBF Документы

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