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IRF2805PBF Технические параметры

Infineon Technologies  IRF2805PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 330W Tc
Turn Off Delay Time 68 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 4.7Ohm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 55V
Current Rating 75A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 104A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 120ns
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 700A
Dual Supply Voltage 55V
Recovery Time 120 ns
Nominal Vgs 4 V
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF2805PBF Документы

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