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IRF2807ZSTRLPBF Технические параметры

Infineon Technologies  IRF2807ZSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 170W Tc
Turn Off Delay Time 40 ns
Number of Elements 1 Element
Series HEXFET®
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 7.4MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 79ns
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 89A
Drain to Source Breakdown Voltage 75V
Height 4.826mm
Width 9.65mm
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF2807ZSTRLPBF Документы

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