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IRF3315L Технические параметры

Infineon Technologies  IRF3315L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 3.8W Ta 94W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Свойство продукта Значение свойства
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
Просмотр сходства

IRF3315L Документы

IRF3315L brand manufacturers: Infineon Technologies, Anli stock, IRF3315L reference price.Infineon Technologies. IRF3315L parameters, IRF3315L Datasheet PDF and pin diagram description download.You can use the IRF3315L Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF3315L pin diagram and circuit diagram and usage method of function,IRF3315L electronics tutorials.You can download from the Anli.