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IRF3315SPBF Технические параметры

Infineon Technologies  IRF3315SPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 94W Tc
Turn Off Delay Time 49 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1997
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Voltage - Rated DC 150V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 21A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 84W
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 32ns
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.082Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 84A
Dual Supply Voltage 150V
Nominal Vgs 4 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF3315SPBF Документы

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