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IRF3315STRRPBF Технические параметры

Infineon Technologies  IRF3315STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package D2PAK
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 94W Tc
Turn Off Delay Time 49 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Power Dissipation 94W
Свойство продукта Значение свойства
Turn On Delay Time 9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Input Capacitance 1.3nF
Drain to Source Resistance 82mOhm
Rds On Max 82 mΩ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant

IRF3315STRRPBF Документы

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