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IRF3708PBF Технические параметры

Infineon Technologies  IRF3708PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 62A Tc
Drive Voltage (Max Rds On, Min Rds On) 2.8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 87W Tc
Turn Off Delay Time 17.6 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2000
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 12MOhm
Voltage - Rated DC 30V
Current Rating 62A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 87W
Свойство продукта Значение свойства
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2417pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time 50ns
Vgs (Max) ±12V
Fall Time (Typ) 3.7 ns
Continuous Drain Current (ID) 62A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 248A
Dual Supply Voltage 30V
Recovery Time 65 ns
Nominal Vgs 2 V
Height 8.763mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF3708PBF Документы

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