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IRF3709ZS Технические параметры

Infineon Technologies  IRF3709ZS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 87A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 79W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.0063Ohm
Pulsed Drain Current-Max (IDM) 350A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status Non-RoHS Compliant
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IRF3709ZS Документы

IRF3709ZS brand manufacturers: Infineon Technologies, Anli stock, IRF3709ZS reference price.Infineon Technologies. IRF3709ZS parameters, IRF3709ZS Datasheet PDF and pin diagram description download.You can use the IRF3709ZS Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF3709ZS pin diagram and circuit diagram and usage method of function,IRF3709ZS electronics tutorials.You can download from the Anli.