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IRF3710LPBF Технические параметры

Infineon Technologies  IRF3710LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 57A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 200W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 23MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 57A
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 58ns
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 57A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 280 mJ
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF3710LPBF Документы

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