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IRF4905LPBF Технические параметры

Infineon Technologies  IRF4905LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 51 ns
Power Dissipation (Max) 170W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 42A Tc
Published 1997
Series HEXFET®
Packaging Tube
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Voltage - Rated DC -55V
Peak Reflow Temperature (Cel) 260
Current Rating -74A
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 99ns
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Continuous Drain Current (ID) -74A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 280A
Dual Supply Voltage 55V
Nominal Vgs 4 V
Width 4.826mm
Length 10.668mm
Height 9.652mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

IRF4905LPBF Документы

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