[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IRF520NSPBF Технические параметры

Infineon Technologies  IRF520NSPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 9.7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 48W Tc
Turn Off Delay Time 32 ns
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 200mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 9.7A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 23ns
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 9.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Recovery Time 150 ns
Nominal Vgs 4 V
Height 4.826mm
Length 10.668mm
Width 10.16mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

IRF520NSPBF Документы

IRF520NSPBF brand manufacturers: Infineon Technologies, Anli stock, IRF520NSPBF reference price.Infineon Technologies. IRF520NSPBF parameters, IRF520NSPBF Datasheet PDF and pin diagram description download.You can use the IRF520NSPBF Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF520NSPBF pin diagram and circuit diagram and usage method of function,IRF520NSPBF electronics tutorials.You can download from the Anli.