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IRF5210PBF Технические параметры

Infineon Technologies  IRF5210PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 79 ns
Current - Continuous Drain (Id) @ 25℃ 40A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 200W Tc
Series HEXFET®
Published 1998
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 60mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC -100V
Peak Reflow Temperature (Cel) 250
Current Rating -40A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 86ns
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Fall Time (Typ) 81 ns
Continuous Drain Current (ID) -40A
Threshold Voltage -4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage -100V
Avalanche Energy Rating (Eas) 780 mJ
Recovery Time 260 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs -4 V
Width 4.69mm
Height 19.8mm
Length 10.5156mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF5210PBF Документы

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