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IRF5305LPBF Технические параметры

Infineon Technologies  IRF5305LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Supplier Device Package TO-262
Current - Continuous Drain (Id) @ 25℃ 31A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 110W Tc
Turn Off Delay Time 39 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 60mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Power Dissipation 110W
Turn On Delay Time 14 ns
Свойство продукта Значение свойства
FET Type P-Channel
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) -31A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Input Capacitance 1.2nF
Drain to Source Resistance 60mOhm
Rds On Max 60 mΩ
Nominal Vgs -4 V
Height 9.65mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF5305LPBF Документы

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