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Infineon Technologies IRF5305LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-262 | |
| Current - Continuous Drain (Id) @ 25℃ | 31A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.8W Ta 110W Tc | |
| Turn Off Delay Time | 39 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2003 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 60mOhm | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Power Dissipation | 110W | |
| Turn On Delay Time | 14 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V | |
| Rise Time | 66ns | |
| Drain to Source Voltage (Vdss) | 55V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 63 ns | |
| Continuous Drain Current (ID) | -31A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -55V | |
| Input Capacitance | 1.2nF | |
| Drain to Source Resistance | 60mOhm | |
| Rds On Max | 60 mΩ | |
| Nominal Vgs | -4 V | |
| Height | 9.65mm | |
| Length | 10.668mm | |
| Width | 4.826mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |