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IRF5305PBF Технические параметры

Infineon Technologies  IRF5305PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25℃ 31A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 110W Tc
Turn Off Delay Time 39 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2000
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 60mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -55V
Current Rating -31A
Lead Pitch 2.54mm
Number of Channels 1Channel
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 110W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage -55V
Input Capacitance 1.2nF
Recovery Time 110 ns
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 60mOhm
Rds On Max 60 mΩ
Nominal Vgs -4 V
Height 19.3mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRF5305PBF Документы

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