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IRF530NPBF Технические параметры

Infineon Technologies  IRF530NPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 17A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 70W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 90MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) 250
Current Rating 17A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Lead Pitch 2.54mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 22ns
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 100V
Recovery Time 140 ns
Nominal Vgs 4 V
Height 8.77mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF530NPBF Документы

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