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IRF540ZPBF Технические параметры

Infineon Technologies  IRF540ZPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 36A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 92W Tc
Turn Off Delay Time 43 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 26.5Ohm
Terminal Finish MATTE TIN OVER NICKEL
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) 250
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 92W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26.5m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 51ns
Vgs (Max) ±20V
Forward Voltage 1.3V
Fall Time (Typ) 39 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 50 ns
Nominal Vgs 4 V
Height 8.77mm
Length 10.54mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IRF540ZPBF Документы

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