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Infineon Technologies IRF5800TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Supplier Device Package | Micro6™(TSOP-6) | |
| Current - Continuous Drain (Id) @ 25℃ | 4A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2W Ta | |
| Turn Off Delay Time | 24 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2010 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
| Termination | SMD/SMT | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Power Dissipation | 2W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 11.4 ns | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | -4A | |
| Threshold Voltage | -1V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -30V | |
| Dual Supply Voltage | -30V | |
| Input Capacitance | 535pF | |
| Drain to Source Resistance | 85mOhm | |
| Rds On Max | 85 mΩ | |
| Nominal Vgs | -1 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |