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IRF5801TRPBF Технические параметры

Infineon Technologies  IRF5801TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 600mA Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 8.8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 2.2Ohm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 200V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Rise Time 8ns
Vgs (Max) ±30V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 600mA
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 4.8A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 9.9 mJ
Nominal Vgs 5.5 V
Height 990.6μm
Length 2.9972mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IRF5801TRPBF Документы

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