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IRF5803D2TRPBF Технические параметры

Infineon Technologies  IRF5803D2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Current - Continuous Drain (Id) @ 25℃ 3.4A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 88 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FETKY™
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 43 ns
Свойство продукта Значение свойства
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 550ns
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage 40V
FET Feature Schottky Diode (Isolated)
Nominal Vgs 3 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF5803D2TRPBF Документы

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