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IRF5803TRPBF Технические параметры

Infineon Technologies  IRF5803TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Current - Continuous Drain (Id) @ 25℃ 3.4A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 88 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 112MOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -40V
Current Rating -3.4A
Configuration Single
Свойство продукта Значение свойства
Number of Channels 1Channel
Power Dissipation 2W
Turn On Delay Time 43 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 550ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) -3.4A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Max Junction Temperature (Tj) 150°C
Height 1.45mm
Length 3.1mm
Width 1.4986mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IRF5803TRPBF Документы

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