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Infineon Technologies IRF5805TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 19 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 3.8A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2W Ta | |
| Turn Off Delay Time | 90 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 2W | |
| Turn On Delay Time | 11 ns | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 98m Ω @ 3.8A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 511pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
| Rise Time | 14ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 49 ns | |
| Continuous Drain Current (ID) | -3.8A | |
| Threshold Voltage | -2.5V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -30V | |
| Dual Supply Voltage | -30V | |
| Nominal Vgs | -2.5 V | |
| Height | 990.6μm | |
| Length | 3mm | |
| Width | 1.7018mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |