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Infineon Technologies IRF5806 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Surface Mount | YES | |
| Current - Continuous Drain (Id) @ 25℃ | 4A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 4.5V | |
| Power Dissipation (Max) | 2W Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2003 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 86m Ω @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 594pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.4nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±20V | |
| Drain Current-Max (Abs) (ID) | 4A | |
| RoHS Status | Non-RoHS Compliant |