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IRF5806TRPBF Технические параметры

Infineon Technologies  IRF5806TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Current - Continuous Drain (Id) @ 25℃ 4A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 2W Ta
Turn Off Delay Time 94 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 86MOhm
Terminal Finish Matte Tin (Sn)
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 2W
Turn On Delay Time 6.2 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 86m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 594pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 4.5V
Rise Time 27ns
Vgs (Max) ±20V
Fall Time (Typ) 126 ns
Continuous Drain Current (ID) -4A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Nominal Vgs -1.2 V
Height 1mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF5806TRPBF Документы

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