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IRF5810TRPBF Технические параметры

Infineon Technologies  IRF5810TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25℃ 2.9A
Number of Elements 2 Elements
Turn Off Delay Time 62 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Resistance 90MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 960mW
Base Part Number IRF5810PBF
Element Configuration Dual
Power Dissipation 960mW
Turn On Delay Time 8.2 ns
Power - Max 960mW
Свойство продукта Значение свойства
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 53 ns
Continuous Drain Current (ID) -2.9A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Input Capacitance 650pF
FET Feature Logic Level Gate
Drain to Source Resistance 90mOhm
Rds On Max 90 mΩ
Nominal Vgs -1.2 V
Height 990.6μm
Length 3mm
Width 1.4986mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF5810TRPBF Документы

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