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Infineon Technologies IRF5850TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Supplier Device Package | 6-TSOP | |
| Current - Continuous Drain (Id) @ 25℃ | 2.2A | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2003 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -20V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 960mW | |
| Current Rating | -2.2A | |
| Power - Max | 960mW | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V | |
| Rise Time | 14ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (ID) | 2.2A | |
| Drain to Source Breakdown Voltage | -20V | |
| Input Capacitance | 320pF | |
| FET Feature | Logic Level Gate | |
| Rds On Max | 135 mΩ | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |