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IRF5851TR Технические параметры

Infineon Technologies  IRF5851TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25℃ 2.7A 2.2A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Свойство продукта Значение свойства
Max Power Dissipation 960mW
Power Dissipation 960mW
Power - Max 960mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.2A
Input Capacitance 400pF
FET Feature Logic Level Gate
Rds On Max 90 mΩ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF5851TR Документы

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