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IRF5851TRPBF Технические параметры

Infineon Technologies  IRF5851TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25℃ 2.7A 2.2A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Resistance 90mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 960mW
Base Part Number IRF5851PBF
Power Dissipation 960mW
Power - Max 960mW
FET Type N and P-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1.25V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 400pF
FET Feature Logic Level Gate
Drain to Source Resistance 90mOhm
Rds On Max 90 mΩ
Nominal Vgs 1.25 V
Height 900μm
Length 3mm
Width 1.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF5851TRPBF Документы

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