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IRF5852 Технические параметры

Infineon Technologies  IRF5852 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25℃ 2.7A
Packaging Tube
Series HEXFET®
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Current Rating 2.7A
Свойство продукта Значение свойства
Power - Max 960mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 1.2ns
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.7A
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF5852 Документы

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