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IRF5852TRPBF Технические параметры

Infineon Technologies  IRF5852TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Supplier Device Package 6-TSOP
Current - Continuous Drain (Id) @ 25℃ 2.7A
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 960mW
Base Part Number IRF5852PBF
Element Configuration Dual
Power Dissipation 960mW
Turn On Delay Time 6.6 ns
Power - Max 960mW
Свойство продукта Значение свойства
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 1.2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 2.4 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1.25V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 400pF
FET Feature Logic Level Gate
Drain to Source Resistance 90mOhm
Rds On Max 90 mΩ
Nominal Vgs 1.25 V
Height 900μm
Length 3mm
Width 1.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF5852TRPBF Документы

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