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IRF6215LPBF Технические параметры

Infineon Technologies  IRF6215LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Supplier Device Package TO-262
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 110W Tc
Turn Off Delay Time 53 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Power Dissipation 110W
Turn On Delay Time 14 ns
FET Type P-Channel
Свойство продукта Значение свойства
Rds On (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 36ns
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) -13A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Input Capacitance 860pF
Drain to Source Resistance 290mOhm
Rds On Max 290 mΩ
Height 9.65mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF6215LPBF Документы

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