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IRF6218PBF Технические параметры

Infineon Technologies  IRF6218PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25℃ 27A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 250W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2003
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -150V
Current Rating -27A
Element Configuration Single
Power Dissipation 250W
Свойство продукта Значение свойства
Turn On Delay Time 21 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) -27A
Threshold Voltage -5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Dual Supply Voltage -150V
Input Capacitance 2.21nF
Drain to Source Resistance 150mOhm
Rds On Max 150 mΩ
Nominal Vgs -5 V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF6218PBF Документы

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