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IRF6608TR1 Технические параметры

Infineon Technologies  IRF6608TR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ST
Current - Continuous Drain (Id) @ 25℃ 13A Ta 55A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 2.1W Ta 42W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±12V
RoHS Status Non-RoHS Compliant
Просмотр сходства

IRF6608TR1 Документы

IRF6608TR1 brand manufacturers: Infineon Technologies, Anli stock, IRF6608TR1 reference price.Infineon Technologies. IRF6608TR1 parameters, IRF6608TR1 Datasheet PDF and pin diagram description download.You can use the IRF6608TR1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF6608TR1 pin diagram and circuit diagram and usage method of function,IRF6608TR1 electronics tutorials.You can download from the Anli.