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Infineon Technologies IRF6620TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric MX | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 27A Ta 150A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.8W Ta 89W Tc | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2006 | |
| JESD-609 Code | e1 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Voltage - Rated DC | 20V | |
| Terminal Position | BOTTOM | |
| Current Rating | 27A | |
| JESD-30 Code | R-XBCC-N3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 89W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 18 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.7m Ω @ 27A, 10V | |
| Vgs(th) (Max) @ Id | 2.45V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4130pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 4.5V | |
| Rise Time | 80ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 6.6 ns | |
| Continuous Drain Current (ID) | 22A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.0027Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| Pulsed Drain Current-Max (IDM) | 220A | |
| Avalanche Energy Rating (Eas) | 39 mJ | |
| Nominal Vgs | 2.45 V | |
| Height | 506μm | |
| Length | 6.35mm | |
| Width | 5.05mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |