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IRF6620TRPBF Технические параметры

Infineon Technologies  IRF6620TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 27A Ta 150A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.8W Ta 89W Tc
Turn Off Delay Time 20 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 20V
Terminal Position BOTTOM
Current Rating 27A
JESD-30 Code R-XBCC-N3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4130pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time 80ns
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0027Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 39 mJ
Nominal Vgs 2.45 V
Height 506μm
Length 6.35mm
Width 5.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF6620TRPBF Документы

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