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IRF6622TRPBF Технические параметры

Infineon Technologies  IRF6622TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 15A Ta 59A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.2W Ta 34W Tc
Turn Off Delay Time 13 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 25V
Terminal Position BOTTOM
Current Rating 15A
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection DRAIN
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 16ns
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0063Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 13 mJ
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

IRF6622TRPBF Документы

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