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IRF6623TRPBF Технические параметры

Infineon Technologies  IRF6623TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ST
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16A Ta 55A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.4W Ta 42W Tc
Turn Off Delay Time 12 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 5.7MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 20V
Terminal Position BOTTOM
Current Rating 16A
JESD-30 Code R-XBCC-N3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 9.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 40ns
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Continuous Drain Current (ID) 55mA
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 43 mJ
Nominal Vgs 2.2 V
Height 506μm
Length 4.826mm
Width 3.95mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF6623TRPBF Документы

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