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IRF6633ATR1PBF Технические параметры

Infineon Technologies  IRF6633ATR1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MU
Number of Pins 3Pins
Supplier Device Package DIRECTFET™ MU
Current - Continuous Drain (Id) @ 25℃ 16A Ta 69A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 2.3W Ta 42W Tc
Turn Off Delay Time 8.4 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Power Dissipation 42W
Свойство продукта Значение свойства
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±20V
Fall Time (Typ) 7.7 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.41nF
Drain to Source Resistance 9.4mOhm
Rds On Max 5.6 mΩ
Height 700μm
Width 5.05mm
Radiation Hardening No
RoHS Status RoHS Compliant

IRF6633ATR1PBF Документы

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