Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies IRF6633ATR1PBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DirectFET™ Isometric MU | |
| Number of Pins | 3Pins | |
| Supplier Device Package | DIRECTFET™ MU | |
| Current - Continuous Drain (Id) @ 25℃ | 16A Ta 69A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Power Dissipation (Max) | 2.3W Ta 42W Tc | |
| Turn Off Delay Time | 8.4 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2008 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| Power Dissipation | 42W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 6.9 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1410pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
| Rise Time | 13ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 7.7 ns | |
| Continuous Drain Current (ID) | 16A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 20V | |
| Input Capacitance | 1.41nF | |
| Drain to Source Resistance | 9.4mOhm | |
| Rds On Max | 5.6 mΩ | |
| Height | 700μm | |
| Width | 5.05mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |