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IRF6644TRPBF Технические параметры

Infineon Technologies  IRF6644TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.3A Ta 60A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.8W Ta 89W Tc
Turn Off Delay Time 34 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 100V
Terminal Position BOTTOM
Current Rating 10.3A
JESD-30 Code R-XBCC-N3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 26ns
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 8.3A
Threshold Voltage 4.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 228A
Avalanche Energy Rating (Eas) 86 mJ
Nominal Vgs 4.8 V
Height 508μm
Length 6.35mm
Width 5.0546mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF6644TRPBF Документы

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