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IRF6645TRPBF Технические параметры

Infineon Technologies  IRF6645TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SJ
Number of Pins 7Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.7A Ta 25A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.2W Ta 42W Tc
Turn Off Delay Time 18 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2008
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 100V
Terminal Position BOTTOM
Current Rating 5.7A
JESD-30 Code R-XBCC-N3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 5ns
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Continuous Drain Current (ID) 5.7mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 29 mJ
Height 410μm
Length 3.95mm
Width 3.95mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF6645TRPBF Документы

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