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IRF6648TR1 Технические параметры

Infineon Technologies  IRF6648TR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Number of Pins 7Pins
Supplier Device Package DIRECTFET™ MN
Current - Continuous Drain (Id) @ 25℃ 86A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 2.8W Ta 89W Tc
Turn Off Delay Time 28 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 60V
Current Rating 86A
Power Dissipation 2.8W
Turn On Delay Time 16 ns
Свойство продукта Значение свойства
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Reverse Recovery Time 31 ns
Continuous Drain Current (ID) 86A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Input Capacitance 2.12nF
Drain to Source Resistance 2MOhm
Rds On Max 7 mΩ
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

IRF6648TR1 Документы

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