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IRF6665TRPBF Технические параметры

Infineon Technologies  IRF6665TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SH
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.2A Ta 19A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.2W Ta 42W Tc
Turn Off Delay Time 14 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 100V
Terminal Position BOTTOM
Current Rating 4.2A
JESD-30 Code R-XBCC-N2
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 2.8ns
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.062Ohm
Drain to Source Breakdown Voltage 100V
Nominal Vgs 5 V
Height 506μm
Length 4.826mm
Width 3.95mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF6665TRPBF Документы

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